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Persona di contatto : Wang Hong

Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply

  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
  • Low Dissipation High Voltage Doorknob Capacitor with High Withstanding Voltage and Insulation Resistance for RF Power Supply
Luogo di origine XIAN, SHANNXI CINA
Marca XIWUER
Certificazione ISO9001,ISO14001,OHSAS18001
Numero di modello CT8-1-40KV-150PF
Quantità di ordine minimo 1 pezzo
Prezzo Negoziabile
Imballaggi particolari Cartone
Tempi di consegna 10-15 giorni
Termini di pagamento L/c, t/t
Capacità di alimentazione 4.000.000 pc all'anno

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Low Dissipation High Voltage Doorknob Capacitor

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High Withstanding Voltage RF Power Supply Capacitor

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High Insulation Resistance HV Doorknob Capacitor
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Descrizione di prodotto
High Voltage Doorknob Capacitors for RF Power Supply
Technical Specifications
No. Specification Dissipation Withstanding Voltage Insulation Resistance Dimensions (mm)
1 20kV-2000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:19 | L:23 | D:12 | M:5
2 20kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:65 | H:15 | L:19 | D:12 | M:5
3 20kV-18000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:17 | L:25 | D:12 | M:5
4 30kV-1000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:24 | L:32 | D:12 | M:4
5 30kV-2700pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:60 | H:20 | L:28 | D:12 | M:4
6 30kV-12000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:45 | H:19 | L:23 | D:12 | M:5
7 40kV-150pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:74 | H:18 | L:26 | D:12 | M:5
8 40kV-500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:28 | H:33 | L:41 | D:8 | M:4
9 40kV-7500pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:24 | L:29 | D:12 | M:6
10 40kV-10000pF ≤0.0040 1.5Ur● 1min ≥1.0 x 105MΩ D:80 | H:22 | L:26 | D:16 | M:5
Application in PECVD Equipment
Our high-voltage doorknob capacitors provide stable high voltage for Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment, essential for semiconductor, photovoltaic, and optical coating industries. These capacitors enable low-temperature deposition of high-quality thin films by maintaining stable, uniform plasma through efficient RF power supply performance.
Technical Challenges Addressed
  • Impedance Matching: Efficient power coupling to dynamically changing plasma loads
  • High RF Power Handling: Withstands electrical stresses from high frequency and voltage
  • Thermal Management: Minimizes heat accumulation from dielectric and electrode losses
  • Long-term Stability: Prevents capacitance drift that affects deposition rate and film quality
Solution: High-Q, Low-ESR Doorknob Capacitors
  • Efficient Power Transfer: Low ESR minimizes heat generation with high RF currents
  • Thermal Stability: Temperature-compensated ceramic dielectric maintains stable capacitance
  • High Reliability: Rugged construction ensures long service life in demanding RF conditions
Customer Benefits
  • Improved film quality and consistency through stable impedance matching
  • Increased productivity and yield with reduced process interruptions
  • Lower operating costs from reduced energy consumption and maintenance
Our high-voltage doorknob capacitors serve as the "impedance harmonizer" for PECVD equipment, enabling precise atomic-level deposition for superior thin film production.
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